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Advanced information

UMS constantly innovate and propose new solutions to anticipate market requests. In the frame of our development outcomes, we propose advanced information on circuits prior to their potential release as products.

Your projects will benefit from our latest developments and up-to-date designs.

For more information, please contact your local sales responsible  or send your demand to mktsales@ums-gaas.com

 

2-22GHz LNA with AGC (AI1713)

UMS has developed a distributed Low Noise Amplifier with adjustable gain control (AGC) in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from 2 to 22GHz.

It is designed for Space application and it is well suited a wide range of applications, such as electronic warfare, X-Ku Point to Point Radio, and test instrumentation.
The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate and air bridges.

It is also available both as a bare die, and in a standard surface mount 24 leads QFN6x6, all form compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006.

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L-Band Low Noise Amplifier (AI1712)

UMS develops an L-Band LNA monolithic circuit including an active bias network. In addition, a protection network is included in order to allow high input power survivability. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.

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8W 5.5-7.5GHz HPA (AI1711)

UMS has developed a packaged 8W AB class 5.5-7.5GHz High Power Amplifier. The device is a 2 stage amplifier typically exhibiting a small signal gain of 18dB with 39dBm output power at 4dB compression. The design is linearity oriented and so the device is compatible with digital baseband linearization techniques.

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5-30GHz Voltage Variable Attenuator (AI1706)

This circuit i s a Voltage Variable Attenuator (VVA) in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from 5 to 30GHz.This device, with an excellent linearity over the full attenuation range, is dedicated to a wide range of applications, from defense electronics to commercial communication systems.

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21-26.5GHz Integrated down-converter (AI1702)

This circuit is a down-convertor proposed in a leadless surface mount hermetic metal ceramic 6x6mm² package. It  integrates a balanced cold FET mixer, a time two multiplier, and a RF LNA. The RF range is 21-26.5GHz and the IF range is DC-3.5GHz.

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6.25-8.25GHz Frequency Doubler (AI1615)

This circuit is a frequency doubler monolithic circuit. It is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems.

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15W GaN HPA (AI1612)

UMS proposes a surface mount packaged High Power Amplifier in the 8.5-10.5GHz frequency band. This HPA provides typically 17W of output power associated to 35% of power added efficiency. The small signal gain exhibits 24dB. The overall power supply is of 30V/0.68A (quiescent current).

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6-18GHz Reflective SPDT (AI1611)

UMS developed a monolithic FET based refective switch operating in the frequency band 6 to 18GHz. Typically, the insertion losses are better than 1.5dB, the isolation is higher than 30dB and the input power at 1dB gain compression is higher than 42dBm.

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140W GaN Power Bar (AI1605)

UMS proposes a 140W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications. It operates at high voltage and takes all the GaN key advantages such as high power, high efficiency and wide band capability up to 4GHz.

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X-Band HPA (AI1511)

UMS develops a two stage GaN high power amplifier in the frequency band 8.5-10.5GHz. The HPA provides typically 28W of output power associated to 40% of power added efficiency. The small signal gain exhibits 30dB. The overall power supply is of 30V/0.75A (quiescent current).

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130W GaN Power Packaged Transistor (AI1507)

 UMS is developing an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications. It operates at high voltage (50V) and takes all the GaN key advantages such as high power (130W), high efficiency (up to 70%) and wide band capability up to a frequency of 1.5GHz, compatible with both Pulsed and CW operating modes.

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20W GaN Power Transistor (AI1505)

UMS propose a 20W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications. It operates at high voltage (50V) and gathers all the GaN key advantages such as high power (>20W), high efficiency (up to 75%) and wide band capability up to 6GHz frequency and compatibility with both Pulsed and CW operating modes. 

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7W GaN Power Packaged Transistor (AI1316)

 UMS is developing an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications. It operates at high voltage (50V) and takes all the GaN key advantages such as high power (>7W), high efficiency (up to 70%) and wide band capability up to a frequency of 6GHz, compatible with both Pulsed and CW operation modes.

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5.8GHz Transponder (AI1232)

The CHR2270-QAG is a reflective transponder operating at 5.8GHz for short and medium range automotive communication (DSRC), Electronic Traffic Control (ETC) and identification transponders. This product is designed using SiGe technology and features a very low power consumption which can result in 5 years battery life.

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