Home About Us Products Foundry Service Fast Request UMS Plants News/Events Contact Us RSS feed
News/Events > CHA6710-99F a new GaN 5.5W MPA
CHA6710-99F a new GaN 5.5W MPA
The CHA6710-99F, a new GaN 5.5W MPA

The CHA6710-99F is a GaN based 5.5W X-Band (8 to 12.75GHz) Medium Power Amplifier. It exhibits 36% of Power Added Efficiency and 23dB linear gain.

This product is supplied as a bare die.

Main features:

  • Frequency range:   8-12.75GHz
  • PAE:    36% @ Psat
  • Linear gain:    23.5dB
  • Psat:    5.5W
  • Biasing:   25V@0.2A (quiescent)
  • Chip size    2.70x2.15x0.10mm

The CHA6710-99F is designed for a wide range of applications including defense and commercial communication systems.

It is manufactured using UMS proprietary 0.25µm gate length GaN pHEMT process.

Link to the datasheet

Top
Home Careers Site Map Legal Information Reps & Distributor Print this page