The CHA8012-99F is a 2-stage 5.2-6GHz High Power Amplifier designed for C-band applications. It typically provides 12W of output power and a small signal gain of 22dB. The power supply requirements are 8V@2.1A.
At 3dB gain compression, this circuit exhibits an output power of 41.5dBm and a very good Power Added Efficiency of 43%.
The circuit is ideally suited for defence and space applications, but it can also address a wide range of microwave and millimeter-wave systems.
This device is manufactured using a GaAs 0.25µm Power pHEMT process.
- RF frequency: 5.2-6GHz
- Output power@3dB comp: 41.5dBm
- PAE@3dB comp: 43%
- Linear gain: 22dB
- Output power: 12W
- DC bias: 8V@2.1A
- Chip size: 5.61x4.51x0.07mm