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News/Events > CHA8012-99F a 5.2-6GHz HPA
CHA8012-99F a 5.2-6GHz HPA
CHA8012-99F a 5.2-6GHz HPA

The CHA8012-99F is a 2-stage 5.2-6GHz High Power Amplifier designed for        C-band applications. It typically provides 12W of output power and a small signal gain of 22dB. The power supply requirements are 8V@2.1A.

At 3dB gain compression, this circuit exhibits an output power of 41.5dBm and a very good Power Added Efficiency of 43%.

The circuit is ideally suited for defence and space applications, but it can also address a wide range of microwave and millimeter-wave systems.

This device is manufactured using a GaAs 0.25µm Power pHEMT process.

Main features:

  • RF frequency: 5.2-6GHz
  • Output power@3dB comp: 41.5dBm
  • PAE@3dB comp: 43%
  • Linear gain: 22dB
  • Output power: 12W
  • DC bias: 8V@2.1A
  • Chip size: 5.61x4.51x0.07mm
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