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News/Events > CHA8610-99F a new GaN HPA
CHA8610-99F a new GaN HPA
CHA8610-99F a new GaN HPA

UMS is enlarging its GaN offer with the new CHA8610-99F 8.5-11GHz X-band High Power Amplifier, featuring a 15 to 18W output power with a high PAE of 40% at Psat.

The product is supplied as a bare die.

Main features:

  • Frequency range:    8.5-11GHz
  • PAE:    40% @ Psat
  • Linear gain:    24dB
  • Psat :   15W
  • Biasing:  30V@0.68A (quiescent)
  • Chip size    5.08x2.75x0.10mm

This circuit is designed for a wide range of applications including military and commercial communication systems.

This product is manufactured using a 0.25µm gate length GaN pHEMT process.

 

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