UMS is enlarging its GaN offer with the new CHA8610-99F 8.5-11GHz X-band High Power Amplifier, featuring a 15 to 18W output power with a high PAE of 40% at Psat.
The product is supplied as a bare die.
- Frequency range: 8.5-11GHz
- PAE: 40% @ Psat
- Linear gain: 24dB
- Psat : 15W
- Biasing: 30V@0.68A (quiescent)
- Chip size 5.08x2.75x0.10mm
This circuit is designed for a wide range of applications including military and commercial communication systems.
This product is manufactured using a 0.25µm gate length GaN pHEMT process.