Home About Us Products Foundry Service Fast Request UMS Plants News/Events Contact Us RSS feed
News/Events > CHA8611-99F a new GaN X-Band HPA
CHA8611-99F a new GaN X-Band HPA
The CHA8611-99F a new GaN X-band HPA

The CHA8611-99F is a GaN based 18W X-band High Power Amplifier, featuring a high PAE of 43% at Psat.

This product is supplied as a bare die.

Main features:

  • Frequency range:8.5-11GHz       
  • PAE: 43% @ Psat       
  • Linear gain: 24dB       
  • Psat: 18W       
  • Biasing: 25V@0.8A (quiescent)       
  • Chip size: 4.36x2.57x0.10mm    


This circuit is designed for a wide range of applications including defense and commercial communication systems.

It is manufactured using UMS proprietary 0.25µm gate length GaN pHEMT process.

Link to the datasheet

Top
Home Careers Site Map Legal Information Reps & Distributor Print this page