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News/Events > CHA8611-99F a new GaN X-Band HPA
CHA8611-99F a new GaN X-Band HPA
The CHA8611-99F a new GaN X-band HPA

The CHA8611-99F is a GaN based 18W X-band High Power Amplifier, featuring a high PAE of 43% at Psat.

This product is supplied as a bare die.

Main features:

  • Frequency range:8.5-11GHz       
  • PAE: 43% @ Psat       
  • Linear gain: 24dB       
  • Psat: 18W       
  • Biasing: 25V@0.8A (quiescent)       
  • Chip size: 4.36x2.57x0.10mm    

This circuit is designed for a wide range of applications including defense and commercial communication systems.

It is manufactured using UMS proprietary 0.25µm gate length GaN pHEMT process.

Link to the datasheet

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