The CHA8611-99F is a GaN based 18W X-band High Power Amplifier, featuring a high PAE of 43% at Psat.
This product is supplied as a bare die.
- Frequency range:8.5-11GHz
- PAE: 43% @ Psat
- Linear gain: 24dB
- Psat: 18W
- Biasing: 25V@0.8A (quiescent)
- Chip size: 4.36x2.57x0.10mm
This circuit is designed for a wide range of applications including defense and commercial communication systems.
It is manufactured using UMS proprietary 0.25µm gate length GaN pHEMT process.
Link to the datasheet