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News/Events > CHZ015A-QEG a GaN Quasi-MMIC device in SMD package
CHZ015A-QEG a GaN Quasi-MMIC device in SMD package
CHZ015A-QEG: a GaN 15W L-Band circuit

The CHZ015A-QEG is a GaN 15W L-Band (1.2-1.4GHz) input matched packaged transistor. It is based on Quasi-MMIC technology.

The circuit operates in pulsed mode and features an output power of 18W with more than 13dB associated gain and a high PAE, up to 55%.

It allows broadband solutions for a variety of RF power applications in L-band. This circuit is particularly well suited for pulsed radar applications.

The CHZ015A-QEG is manufactured on a 0.5µm gate length GaN HEMT process. It is supplied in a low cost SMD package 24L-QFN 4x5.

Main features:

  •  Frequency range:    1.2-1.4GHz
  • Small signal gain:   19.5dB
  • Power:                        >15W
  • Associated gain:      >13dB
  • PAE:                          Up to 55%
  • Saturated drain current:    650mA
  • DC bias:                   VDS 45V @ ID_Q 100mA
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