CHA6710-99F a new GaN 5.5W MPA
The CHA6710-99F, a new GaN 5.5W MPA

The CHA6710-99F is a GaN based 5.5W X-Band (8 to 12.75GHz) Medium Power Amplifier. It exhibits 36% of Power Added Efficiency and 23dB linear gain.

This product is supplied as a bare die.

Main features:

  • Frequency range:   8-12.75GHz
  • PAE:    36% @ Psat
  • Linear gain:    23.5dB
  • Psat:    5.5W
  • Biasing:   25V@0.2A (quiescent)
  • Chip size    2.70x2.15x0.10mm

The CHA6710-99F is designed for a wide range of applications including defense and commercial communication systems.

It is manufactured using UMS proprietary 0.25µm gate length GaN pHEMT process.

Link to the datasheet