UMS Foundry announces the extension of the GH25 GaN FET library to very large devices.
Up until now, our GaN foundry libraries and PDKs” supported FET topologies up to 150µm unitary gate width. To meet customer HPA design requirements, we have added the 8 and 10 gate fingers for 175µm to 300 µm scalable gate widths.
With this extended version, you will now be able to design very high power amplifiers, benefitting the from high GaN power density at 30V drain operation, supported by electro-thermal non-linear models.
This extension will be released in our ADS GH25 PDK, enabling Power Amplifier designs, especially from L-band to C-band domains.