The 7th Earth Explorer Mission of ESA, Biomass, is dedicated to the global observation of above-ground forest biomass. As part of the Biomass project, UMS was selected to develop, manufacture and qualify Gallium Nitride (GaN) power transistors for the realization of a SAR system.
The two 15 W and 80 W packaged transistors for the driver and the power stage of the SSPA have been developed using the UMS space evaluated 0.5µm GaN process (GH50). They have been assembled into hermetic metal-ceramic packages by Tesat-Spacecom GmbH & Co.KG.
All Qualification tests have been successfully completed. It is a major milestone for the soon-to-be completed first ever Gallium Nitride product qualification following the ESCC 5010 specification.
This is a breakthrough, not only for UMS and the maturity of its Gallium Nitride technologies, but also for the European and national Space Agencies and Industry by strengthening the confidence in GaN devices and enabling easy access to full space qualified GaN technology for future space projects.