UMS is pursuing the development of its product range for space applications. The new CHA6710-FAB is a GaN based 5W X-Band (8 to 12.75GHz) Medium Power Amplifier in hermetic metal ceramic package.
It exhibits 35% of Power Added Efficiency and 22.5dB linear gain.
This circuit is designed on an UMS proprietary space evaluated 0.25µm GaN HEMT process.
The CHA6710-FAB is recommended for applications such as X-band radar and space Ku-band communication systems.
This product can also be supplied as a bare die (CHA6710-99F).
- Frequency range: 8-12.75GHz
- Linear gain: 22.5dB
- Saturated Output power: 5W
- Associated Power Added Efficiency: 35%
- DC bias: 25V@ 0.2A
- 6x6mm2 hermetic metal ceramic package