CHK8015-99F - 16W Power Transistor

Function
 GaN POWER TRANSISTOR
Glin (dB) @ Freq (GHz)
 17@9
Saturated Power (W)
 20
PAE (%) @ Freq (GHz)
 68@9
Operating Frequency (GHz)
 Up to 18
Case
 Die
Description

 

The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications.

The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate.

It is proposed in a bare die form and requires an external matching circuitry.

 

Attachments

GaN POWER TRANSISTOR