CHK9013-99F - 85W Power Transistor

Function
 GaN POWER TRANSISTOR
Reference produit
 CHK9013-99F
Glin (dB) @ Freq (GHz)
 18@6
Operating Frequency (GHz)
 Up to 8
PAE (%) @ Freq (GHz)
 65@6
Case
 Die
Description

 

 

The CHK9013-99F is a 85W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.

The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrate.

It is proposed in a bare die form and requires an external matching circuitry.

 

 

 

Attachments

GaN POWER TRANSISTOR